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STD75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 , 75 A, DPAK, IPAK, Short IPAK STripFETTM VI DeepGATETM Power MOSFET Features Type VDSS RDS(on) max ID 3 STD75N3LLH6 30 V < 0.0055 75 A 3 1 2 STU75N3LLH6 30 V < 0.0059 75 A 1 STU75N3LLH6-S 30 V < 0.0059 75 A DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) 3 2 High avalanche ruggedness 1 Low gate drive power losses Short IPAK Application Switching applications Figure 1. Internal schematic diagram Description D (TAB or 2) This product utilizes the 6th generation of design rules of ST's proprietary STripFETTM technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. G(1) S(3) AM01474v1 Table 1. Device summary Order code Marking Package Packaging STD75N3LLH6 75N3LLH6 DPAK Tape and reel STU75N3LLH6 75N3LLH6 IPAK Tube STU75N3LLH6-S 75N3LLH6 Short IPAK Tube October 2009 Doc ID 15978 Rev 2 1/16 www.st.com 16 Contents STD75N3LLH6, STU75N3LLH6, STU75N3LLH6-S Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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